Vapor phase thin film growth device and vapor phase thin film growth methodological

摘要

PROBLEM TO BE SOLVED: To provide a vapor phase thin film epitaxial growth system and a vapor phase thin film epitaxial growth method in which production per butch of film depositing operation can be increased without sacrifice of the thickness of a thin film being deposited on an article being processed and the uniformity of compositional ratio.;SOLUTION: Material gas having a high thermal decomposition point is heated sufficiently before reaching an article 4 being processed by supplying the material gas from an opening 5 for supplying material gas having a high thermal decomposition point located closely to the center of rotation 11 of a susceptor. On the other hand, material gas having a low thermal decomposition point is cooled through a cooling mechanism 7 and supplied from an opening 6 for supplying material gas having a low thermal decomposition point located closely to the article 4 being processed thus retarding thermal decomposition thereof before reaching the article 4 being processed. Both gases having a high thermal decomposition point and a low thermal decomposition point are thermally decomposed immediately before the article 4 being processed.;COPYRIGHT: (C)2003,JPO