METHOD FOR VAPOR-PHASE GROWTH OF PHASE-CHANGE THIN FILM, AND DEVICE FOR VAPOR-PHASE GROWTH OF PHASE-CHANGE THIN FILM

摘要

Provided are a method for vapor-phase growth of a phase-change thin film, and a device for vapor-phase growth of a phase-change thin film, with which a phase-change thin film is formed at low temperature while retained in an amorphous state, in order to form a phase-change thin film that is flat at the nanometer level and has excellent coverage, which is necessary to obtain a three-dimensional, ULSI phase-change memory. In order to form films at low temperature in the present invention, a structure is provided in which an ammonia cracker into which nitrogen radicals obtained by decomposing ammonia are introduced is connected to the reactor of a vapor-phase growth device, and organometals on the front surface of a substrate are decomposed at low temperature. With this device it is possible to obtain a completely amorphous film in which the front surface is flat at the nanometer order, using an amine complex as a Ge raw material at the low temperature of 135°C. It is also possible to form a film at low temperature and with good coverage for a three-dimensional structure.