Method for unpinning the Fermi level of a semiconductor in an electrical junction and device incorporating the junction

摘要

There is described an electrical junction comprising an interface layer disposed between a metal and a semiconductor. The interface layer includes a passivating material for passivating the surface of the semiconductor. The interface layer has a thickness configured to reduce contact resistance between the metal and the semiconductor from that which would exist at a junction between the metal and the semiconductor without the interface layer disposed therebetween.