MODEL OF DEFINING A PHOTORESIST PATTERN COLLAPSE RULE, AND PHOTOMASK LAYOUT, SEMICONDUCTOR SUBSTRATE AND METHOD FOR IMPROVING PHOTORESIST PATTERN COLLAPSE

摘要

A model of defining a photoresist pattern collapse rule is provided. A portion of the photoresist pattern which corresponds to a second line pattern of a photomask layout is defined as non-collapse if d≧5a and c≧1.5b or if 5ad≧3a and c≧1.2b, wherein b is the widths of two first line patterns, c is the width of a second line pattern of the photomask layout, and a and d are distances between the second line pattern and the two first line patterns. Accordingly, a photomask layout, a semiconductor substrate and a method for improving photoresist pattern collapse for post-optical proximity correction are also provided.