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Methods of eliminating pattern collapse on photoresist patterns

机译:消除光致抗蚀剂图案上的图案塌陷的方法

摘要

A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.
机译:公开了一种用于处理光致抗蚀剂图案的稳定溶液以及防止轮廓异常,倾倒和抗蚀剂基脚的方法。稳定溶液包含非挥发性组分,例如非挥发性颗粒或聚合物,其在显影光致抗蚀剂材料之后施加。通过在显影之后但在干燥之前用包含非挥发性成分的溶液处理光致抗蚀剂,该非挥发性成分填充相邻抗蚀剂图案之间的空间并在干燥期间保留在基板上。非易失性组分为抗蚀剂提供结构和机械支撑,以防止由于液体表面张力而变形或塌陷。

著录项

  • 公开/公告号US8956981B2

    专利类型

  • 公开/公告日2015-02-17

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US201314044304

  • 发明设计人 YOSHIKI HISHIRO;JON DALEY;

    申请日2013-10-02

  • 分类号H01L21/302;H01L21/461;H01L21/033;G03F7/40;

  • 国家 US

  • 入库时间 2022-08-21 15:20:03

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