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INVERTED-TRENCH GROUNDED-SOURCE FET STRUCTURE USING CONDUCTIVE SUBSTRATES, WITH HIGHLY DOPED SUBSTRATES
INVERTED-TRENCH GROUNDED-SOURCE FET STRUCTURE USING CONDUCTIVE SUBSTRATES, WITH HIGHLY DOPED SUBSTRATES
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机译:导电基底和高掺杂基底的反沟道地源场效应管结构
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摘要
This invention discloses an inverted field-effect-transistor (iT-FET) semiconductor device that includes a source disposed on a bottom and a drain disposed on a top of a semiconductor substrate. The semiconductor power device further comprises a trench-sidewall gate placed on sidewalls at a lower portion of a vertical trench surrounded by a body region encompassing a source region with a low resistivity body-source structure connected to a bottom source electrode and a drain link region disposed on top of said body regions thus constituting a drift region. The drift region is operated with a floating potential said iT-FET device achieving a self-termination.
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