首页> 外国专利> ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICE, METHOD OF FABRICATING THE DEVICE, AND ELECTRONIC APPARATUS INCLUDING THE DEVICE

ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICE, METHOD OF FABRICATING THE DEVICE, AND ELECTRONIC APPARATUS INCLUDING THE DEVICE

机译:静电放电(ESD)保护设备,制造该设备的方法以及包括该设备的电子设备

摘要

An electrostatic discharge (EDS) device includes a substrate, an external well of a first conductivity type in the substrate, and an internal well of a second conductivity type in the external well, the first conductivity type opposite the second conductivity type. The EDS device further includes a first heavily doped region of the first conductivity type located at a surface of the internal well, a second heavily doped region of the second conductivity type located at a surface of the internal well, and a third heavily doped region of the first conductivity type located at a surface of the external well. The second heavily doped region is interposed between and spaced from each of the first and third heavily doped regions, and at least one of a space between the first and second heavily doped regions and a space between the second and third heavily doped regions is devoid of a device isolation structure of electrical isolation material.
机译:静电放电(EDS)装置包括:基板;在基板中的第一导电类型的外部阱;以及在外部阱中的第二导电类型的内部阱,第一导电类型与第二导电类型相反。该EDS装置还包括位于内部阱的表面处的第一导电类型的第一重掺杂区域,位于内部阱的表面处的第二导电类型的第二重掺杂区域和位于内部阱表面的第三重掺杂区域。第一导电类型位于外部阱的表面。第二重掺杂区介于第一和第三重掺杂区之间并且与第一重掺杂区和第三重掺杂区中的每个间隔开,并且第一重掺杂区和第二重掺杂区之间的空间以及第二重掺杂区和第三重掺杂区之间的空间中的至少一个没有。电隔离材料的器件隔离结构。

著录项

  • 公开/公告号US2012043643A1

    专利类型

  • 公开/公告日2012-02-23

    原文格式PDF

  • 申请/专利权人 DONG-RYUL CHANG;OH-KYUNM KWON;

    申请/专利号US201113041693

  • 发明设计人 DONG-RYUL CHANG;OH-KYUNM KWON;

    申请日2011-03-07

  • 分类号H01L29/735;H01L21/331;

  • 国家 US

  • 入库时间 2022-08-21 17:32:12

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