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Growth and Transfer of Monolithic Horizontal Nanowire Superstructures onto Flexible Substrates

机译:单片水平纳米线超结构在柔性基板上的生长和转移

摘要

In a method of making a monolithic elongated nanowire, a mask polymer layer is applied to a selected crystal surface of a seed crystal. A plurality of spaced apart elongated openings is defined through the mask polymer layer, thereby exposing a corresponding plurality of portions of the crystal surface. The openings are disposed so as to be aligned with and parallel to a selected crystal axis of the seed crystal. The portions of the crystal surface are subjected to a chemical nutrient environment that causes crystalline material to grow from the plurality of portions for at least a period of time so that monocrystalline members grow from the elongated openings and until the monocrystalline members laterally expand so that each monocrystalline member grows into and merges with an adjacent one of the monocrystalline members, thereby forming a monolithic elongated nanowire.
机译:在制造整体细长纳米线的方法中,将掩膜聚合物层施加到籽晶的选定晶体表面上。穿过掩模聚合物层限定多个间隔开的细长开口,从而暴露出晶体表面的相应的多个部分。设置开口以与种晶的选定晶轴对准并平行。晶体表面的这些部分处于化学营养环境中,该环境导致晶体材料从多个部分中生长至少一段时间,以使单晶构件从细长的开口中生长出来,直到单晶构件横向膨胀,从而使每个单晶构件生长到相邻的单晶构件中并与之融合,从而形成整体的细长纳米线。

著录项

  • 公开/公告号US2012168710A1

    专利类型

  • 公开/公告日2012-07-05

    原文格式PDF

  • 申请/专利权人 ZHONG L. WANG;SHENG XU;

    申请/专利号US20100980666

  • 发明设计人 ZHONG L. WANG;SHENG XU;

    申请日2010-12-29

  • 分类号H01L29/66;B05D5/12;C08K3/22;C30B19/00;C08L33/12;B82Y40/00;B82Y30/00;

  • 国家 US

  • 入库时间 2022-08-21 17:32:02

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