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DOPING OF PLANAR OR THREE-DIMENSIONAL STRUCTURES AT ELEVATED TEMPERATURES
DOPING OF PLANAR OR THREE-DIMENSIONAL STRUCTURES AT ELEVATED TEMPERATURES
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机译:平面或三维结构在高温下的浸渍
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摘要
An improved method of doping a workpiece is disclosed. In this method, a film comprising the species to be implanted is introduced to the surface of a planar or three-dimensional workpiece. This film can be grown using CVD, a bath or other means. The workpiece with the film is then subjected to ion bombardment to help drive the dopant into the workpiece. This ion bombardment is performed at elevated temperatures to reduce crystal damage and create a more abrupt doped region.
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