CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION
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CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION
CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION
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机译:化学增幅型正性抗蚀剂组合物,抗蚀剂膜,抗蚀剂涂覆的面膜毛坯和使用该组合物的抗蚀剂图案形成方法
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摘要
The object of the present invention is to solve the technical problems in the microfabrication of photomasks or semiconductors and is, in particular, to provide a chemical amplification type positive resist film, and a resist film, resist coated mask blanks and a method of forming a resist pattern using the composition, which satisfy at the same time all of high sensitivity, high resolution (for example, high resolving power), good exposure latitude (EL), and good line edge roughness (LER).;A chemical amplification type positive resist composition comprising: a high molecular compound (A) having a repeating unit represented by the following general formula (1), a repeating unit represented by the following general formula (2), and a repeating unit represented by the following general formula (3).; 展开▼