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QUANTUM-DOT LASER DIODE

机译:量子点激光二极管

摘要

Aspects of the present disclosure relate to the field of laser technology, specifically semiconductor lasers, and to novel biomedical applications of such lasers, including novel methods of photodynamic therapy. Exemplary embodiments of the present disclosure include a semiconductor laser diode having an active region having a gain medium with one or more InGaAs/InAs quantum dot layers; and wherein the laser diode can be arranged in operation to emit laser light having a central wavelength within spectral range of wave lengths. The present embodiments further include a method of directly forming a reactive oxygen species (ROS), the method including exposing a medium having a potential source of ROS to a semiconductor laser diode, the semiconductor laser diode configured to emit laser light having a central wavelength within the spectral range.
机译:本公开的各方面涉及激光技术领域,特别是半导体激光器,并且涉及这种激光器的新型生物医学应用,包括光动力疗法的新型方法。本公开的示例性实施例包括一种半导体激光二极管,该半导体激光二极管具有有源区,该有源区具有具有一个或多个InGaAs / InAs量子点层的增益介质。并且其中激光二极管可以被布置为在操作中发射具有在波长的光谱范围内的中心波长的激光。本实施方式还包括直接形成反应性氧(ROS)的方法,该方法包括将具有ROS的潜在源的介质暴露于半导体激光二极管,该半导体激光二极管被配置为发射中心波长在光谱范围。

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