VERTICAL HETEROJUNCTION BIPOLAR TRANSISTORS WITH REDUCED BASE-COLLECTOR JUNCTION CAPACITANCE
展开▼
机译:垂直异质结双极晶体管,基极-结间电容减小
展开▼
页面导航
摘要
著录项
相似文献
摘要
Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance, as well as fabrication methods for vertical heterojunction bipolar transistors and design structures for BiCMOS integrated circuits. The vertical heterojunction bipolar transistor includes a barrier layer between the intrinsic base and the extrinsic base that blocks or reduces diffusion of a dopant from the extrinsic base to the intrinsic base. The barrier layer has at least one opening that permits direct contact between the intrinsic base and a portion of the extrinsic base disposed in the opening.
展开▼