首页> 外国专利> NONVOLATILE SEMICONDUCTOR STORAGE DEVICE, NONVOLATILE SEMICONDUCTOR STORAGE SYSTEM AND METHOD OF MANAGING OF DEFECTIVE COLUMN IN NONVOLATILE SEMICONDUCTOR STORAGE SYSTEM

NONVOLATILE SEMICONDUCTOR STORAGE DEVICE, NONVOLATILE SEMICONDUCTOR STORAGE SYSTEM AND METHOD OF MANAGING OF DEFECTIVE COLUMN IN NONVOLATILE SEMICONDUCTOR STORAGE SYSTEM

机译:非易失性半导体存储装置,非易失性半导体存储系统以及非易失性半导体存储系统中的缺陷柱的管理方法

摘要

A nonvolatile semiconductor storage device is disclosed, which includes a memory cell array in which nonvolatile memory cells are arranged, a first data holding circuit which temporarily holds a collective processing unit of read or write data to be simultaneously read from or written to the memory cells, a circuit which takes out the data held in the first data holding circuit from the device, and a second data holding circuit in which data is automatically set at a time when power supply is turned on and in which the data is changeable based on a command input to the device, wherein the collective processing unit is equal to a sum of the number of units used within the device and the maximum number of units continuously output from the device to outside or input to the device from outside.
机译:公开了一种非易失性半导体存储装置,其包括:其中布置有非易失性存储单元的存储单元阵列;第一数据保持电路,其临时保持要同时从所述存储单元读取或写入所述存储单元的读取或写入数据的集合处理单元。 ;电路,其从设备中取出保持在第一数据保持电路中的数据;以及第二数据保持电路,其中在接通电源时自动设置数据,并且该数据可基于电源改变命令输入到设备,其中集合处理单元等于设备内使用的单元数与从设备连续输出到外部或从外部输入到设备的最大单元数之和。

著录项

  • 公开/公告号US2012113719A1

    专利类型

  • 公开/公告日2012-05-10

    原文格式PDF

  • 申请/专利权人 NAOYA TOKIWA;

    申请/专利号US201213353047

  • 发明设计人 NAOYA TOKIWA;

    申请日2012-01-18

  • 分类号G11C16/06;

  • 国家 US

  • 入库时间 2022-08-21 17:30:05

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