首页> 外国专利> Integrated structures of high performance active devices and passive devices

Integrated structures of high performance active devices and passive devices

机译:高性能有源器件和无源器件的集成结构

摘要

Integrated structures having high performance CMOS active devices mounted on passive devices are provided. The structure includes an integrated passive device chip having a plurality of through wafer vias, mounted to a ground plane. The structure further includes at least one CMOS device mounted on the integrated passive device chip using flip chip technology and being grounded to the ground plane through the through wafer vias of the integrated passive device chip.
机译:提供了具有安装在无源器件上的高性能CMOS有源器件的集成结构。该结构包括集成的无源器件芯片,该芯片具有安装到接地平面的多个晶圆通孔。该结构还包括至少一个CMOS器件,该器件使用倒装芯片技术安装在集成无源器件芯片上,并通过集成无源器件芯片的晶圆通孔接地到接地平面。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号