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Method and system for fracturing a pattern using charged particle beam lithography with multiple exposure passes which expose different surface area
Method and system for fracturing a pattern using charged particle beam lithography with multiple exposure passes which expose different surface area
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, in which the union of shots from one of a plurality of exposure passes is different than the union of shots from a different exposure pass. Methods for manufacturing a reticle and for manufacturing an integrated circuit are also disclosed, in which the union of shots from one of a plurality of charged particle beam exposure passes is different than the union of shots from a different exposure pass.
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