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Semiconductor device including a die region designed for aluminum-free solder bump connection and a test structure designed for aluminum-free wire bonding
Semiconductor device including a die region designed for aluminum-free solder bump connection and a test structure designed for aluminum-free wire bonding
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机译:半导体器件,包括设计用于无铝焊料凸点连接的管芯区域和设计用于无铝引线键合的测试结构
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摘要
In sophisticated semiconductor devices including copper-based metallization systems, a substantially aluminum-free bump structure in device regions and a substantially aluminum-free wire bond structure in test regions may be formed on the basis of a manufacturing process resulting in identical final dielectric layer stacks in these device areas. The number of process steps may be reduced by making a decision as to whether a substrate is to become a product substrate or test substrate for estimating the reliability of actual semiconductor devices. For example, nickel contact elements may be formed above copper-based contact areas wherein the nickel may provide a base for wire bonding or forming a bump material thereon.
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