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Cross-point memory devices, electronic systems including cross-point memory devices and methods of accessing a plurality of memory cells in a cross-point memory array
Cross-point memory devices, electronic systems including cross-point memory devices and methods of accessing a plurality of memory cells in a cross-point memory array
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机译:交叉点存储设备,包括交叉点存储设备的电子系统以及访问交叉点存储阵列中的多个存储单元的方法
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摘要
Memory devices comprise a plurality of memory cells, each memory cell including a memory element and a selection device. A plurality of first (e.g., row) address lines can be adjacent (e.g., under) a first side of at least some cells of the plurality. A plurality of second (e.g., column) address lines extend across the plurality of row address lines, each column address line being adjacent (e.g., over) a second, opposing side of at least some of the cells. Control circuitry can be configured to selectively apply a read voltage or a write voltage substantially simultaneously to the address lines. Systems including such memory devices and methods of accessing a plurality of cells at least substantially simultaneously are also disclosed.
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