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Forming a MOS memory device having a dielectric film laminate as a charge accumulation region
Forming a MOS memory device having a dielectric film laminate as a charge accumulation region
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机译:形成具有电介质膜叠层作为电荷累积区域的MOS存储器件
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摘要
To manufacture a MOS memory device having a dielectric film laminate in which adjacent dielectric films have band-gaps of different magnitudes, a plasma processing device which transmits microwaves to a chamber by means of a planar antenna having a plurality of holes is used to perform plasma CVD under pressure conditions that differ from at least pressure conditions used when forming the adjacent dielectric films, and the dielectric films are sequentially formed by altering the band-gaps of the adjacent dielectric films that constitute the dielectric film laminate.
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