首页> 外国专利> Techniques for electrically characterizing tunnel junction film stacks with little or no processing

Techniques for electrically characterizing tunnel junction film stacks with little or no processing

机译:无需或只需很少处理即可对隧道结薄膜叠层进行电表征的技术

摘要

Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.
机译:探针电连接到包括自由层,隧道势垒和被钉扎层的隧道结膜堆叠的表面。确定各种探针间距和堆叠层之一的许多磁化强度的电阻。探针间距是距长度标尺的距离,该长度标尺与隧道结薄膜叠层的电阻面积(RA)乘积有关。使用的间距应尽可能小,约为长度标尺的40倍。有利地,在电阻测量过程中使用的探针之间的最小间距小于100微米。根据在该层的两个磁化强度处出现的“高”和“低”电阻确定测得的面内磁阻(MR)曲线。 RA乘积,自由层和固定层的每平方电阻以及垂直MR通过曲线拟合确定。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号