首页> 外国专利> IMPROVED SILICON THIN FILM DEPOSITION FOR PHOTOVOLTAIC DEVICE APPLICATIONS.

IMPROVED SILICON THIN FILM DEPOSITION FOR PHOTOVOLTAIC DEVICE APPLICATIONS.

机译:用于光电器件应用的改进的硅薄膜沉积。

摘要

The present invention provides for cost-efficient methods for on-line deposition of semi-conducting metallic layers. More specifically, the present invention provides on-line pyrolytic deposition methods for deposition of p-type, n-type and i-type semi-conducting metallic layers in the float glass production process. Furthermore, the present invention provides for on-line pyrolytic deposition methods for production of single-, double-, triple- and multi- junction p-(i-)n and n-(i-)p type semi-conducting metal layers. Such p-type, n-type and i-type semi-conducting metal layers are useful in the photovoltaic industry and attractive to manufacturers of photovoltaic modules as "value-added" products.
机译:本发明提供了用于在线沉积半导体金属层的经济有效的方法。更具体地说,本发明提供在线热解沉积方法,用于在浮法玻璃生产过程中沉积p型,n型和i型半导体金属层。此外,本发明提供了在线热解沉积方法,用于生产单,双,三和多结p-(i-)n和n-(i-)p型半导体金属层。这样的p型,n型和i型半导体金属层在光伏工业中是有用的,并且作为“增值”产品对光伏模块的制造商有吸引力。

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