首页> 外国专利> GRAPHENE ELECTRODES ON A PLANAR CUBIC SILICON CARBIDE (3C-SIC) LONG TERM IMPLANTABLE NEURONAL PROSTHETIC DEVICE

GRAPHENE ELECTRODES ON A PLANAR CUBIC SILICON CARBIDE (3C-SIC) LONG TERM IMPLANTABLE NEURONAL PROSTHETIC DEVICE

机译:平面立方碳化硅(3C-SIC)长期可植入神经修复装置上的石墨烯电极

摘要

Graphene, can be used to make an implantable neuronal prosthetic which can be indefinitely implanted in vivo. Graphene electrodes are placed on a 3C-SiC shank and electrical insulation is provided by conformal insulating SiC. These materials are not only chemically resilient, physically durable, and have excellent electrical properties, but have demonstrated a very high degree of biocompatibility. Graphene also has a large specific capacitance in electrolytic solutions as well as a large surface area which reduces the chances for irreversible Faradaic reactions. Graphene can easily be constructed on SiC by the evaporation of Si from the surface of that material allowing for mechanically robust epitaxial graphene layers that can be fashioned into electrodes using standard lithography and etching methods.
机译:石墨烯可用于制造可无限期植入体内的可植入神经元假体。将石墨烯电极放在3C-SiC柄上,并通过保形绝缘SiC提供电绝缘。这些材料不仅具有化学弹性,物理耐用性,并且具有出色的电性能,而且还具有很高的生物相容性。石墨烯在电解液中还具有大的比电容,以及大的表面积,这减少了不可逆的法拉第反应的机会。可以通过从材料表面蒸发Si来轻松地在SiC上构建石墨烯,从而可以使用标准光刻和蚀刻方法将机械坚固的外延石墨烯层制成电极。

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