Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminium, indium, gallium) nitride ((AI, In,Ga)N) substrates for opto-electronic and electronic devices

摘要

A homoepitaxial III-V nitride article, comprising a III-V nitride homoepitaxial layer deposited on a free-standing III-V nitride material substrate, wherein said III-V nitride homoepitaxial layer has a dislocation density of less than 1E6 dislocations per square centimeter, and the article comprises one of the following features: (i) oxidized material is provided between the III-V nitride homoepitaxial layer and the free-standing III-V nitride material substrate; (ii) an epi interlayer is provided between the III-V nitride homoepitaxial layer and the free-standing III-V nitride material substrate; and (iii) the free-standing III-V nitride material substrate is offcut, and the III-V nitride homoepitaxial layer comprises non-(0001) homoepitaxial step flow crystal growth.