NAND DEVICES HAVING A FLOATING GATE COMPRISING A FIN PORTION INTERDIGITATED WITH THE CONTROL GATE AND METHOD OF MANUFACTURING THE SAME

摘要

A NAND device including a source, a drain and a channel located between the source and drain. The NAND device also includes a plurality of floating gates (110A) located over the channel and a plurality of electrically conducting fins (122). Each of the plurality of electrically conducting fins is located over one of the plurality of floating gates. The plurality of electrically conducting fins include a material other than polysilicon. The NAND device also includes a plurality of control gates (152,127). Each of the plurality of control gates is located adjacent to each of the plurality of floating gates and each of the plurality of electrically conducting fins.