PROCESSES TO FORM AQUEOUS PRECURSORS, HAFNIUM AND ZIRCONIUM OXIDE FILMS, AND HAFNIUM AND ZIRCONIUM OXIDE PATTERNS

摘要

Embodiments of a method for synthesizing aqueous precursors comprising Hf⁴⁺ or Zr⁴⁺ cations, peroxide, and a monoprotic acid are disclosed. The aqueous precursors are suitable for making HfO₂ and ZrO₂ thin films, which subsequently can be patterned. The disclosed thin films are dense and continuous, with a surface roughness of ≤ 0.5 nm and a refractive index of 1.85-2.0 at λ = 550 nm. Some embodiments of the disclosed thin films have a leakage-current density ≤ 20 nA/cm² at 1 MV/cm, with a dielectric breakdown ≥ 3 MV/cm. The thin films can be patterned with radiation to form dense lines and space patterns.