PATTERN-SPLIT DECOMPOSITION STRATEGY FOR DOUBLE-PATTERNED LITHOGRAPHY PROCESS

摘要

An integrated circuit may be formed by a process of forming a first interconnect pattern (208) in a plurality of parallel route tracks (206), and forming a second interconnect pattern (224) in the plurality of parallel route tracks. The first interconnect pattern (208) includes a first lead pattern which extends to a first point (216) in an instance of the first plurality of parallel route tracks, and the second interconnect pattern (224) includes a second lead pattern which extends to a second point (232) in the same instance of the plurality of parallel route tracks, such that the second point (232) is laterally separated from the first point (216) by a distance one to one and one-half times a space between adjacent parallel lead patterns in the plurality of parallel route tracks. A metal interconnect formation process is performed which forms metal interconnect lines in an interconnect level defined by the first interconnect pattern and the second interconnect pattern.