METHOD FOR CONTROLLING DANGLING BONDS IN FLUOROCARBON FILMS

摘要

Embodiments of the invention describe a method for forming fluorocarbon films for semiconductor devices. The method includes providing a substrate on a substrate holder in a plasma processing chamber, introducing in the plasma processing chamber a first process gas containing a C_aF_b gas, forming a first plasma from the first process gas by applying a first RF bias and a first positive DC bias to the substrate holder, and depositing a first fluorocarbon film on the substrate by the first plasma. The method further includes introducing in the plasma processing chamber a second process gas containing a C_aF_b gas, forming a second plasma from the second process gas by applying microwave power to the microwave antenna, and applying second RF bias and a second positive DC bias to the substrate holder, and depositing a second fluorocarbon film on the first fluorocarbon film by the second plasma.