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SEMICONDUCTOR ON INSULATOR AND METHODS OF FORMING SAME USING TEMPERATURE GRADIENT IN AN ANODIC BONDING PROCESS
SEMICONDUCTOR ON INSULATOR AND METHODS OF FORMING SAME USING TEMPERATURE GRADIENT IN AN ANODIC BONDING PROCESS
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机译:绝缘体上的半导体和在阳极键合工艺中利用温度梯度形成相同导体的方法
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摘要
Methods and apparatus for producing a semiconductor on glass (SOG) structure include: bringing a first surface of a glass substrate into direct or indirect contact with a semiconductor wafer; heating at least one of the glass substrate and the semiconductor wafer such that a second surface of the glass substrate, opposite to the first surface thereof, is at a lower temperature than the first surface; applying a voltage potential across the glass substrate and the semiconductor wafer; and maintaining the contact, heating and voltage to induce an anodic bond between the semiconductor wafer and the glass substrate via electrolysis.
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