CIRCUIT FOR PROTECTING THE DISCHARGE OF STATIC ELECTRICITY BASED ON A SILICON CONTROLLED RECTIFIER WITH AN INTEGRATED JFET(JUNCTION FIELD EFFECT TRANSISTOR), AN OPERATION METHOD THEREOF, AND A DESIGN STRUCTURE THEREOF

摘要

PURPOSE: A circuit for protecting the discharge of static electricity based on a silicon controlled rectifier with an integrated JFET(Junction Field Effect Transistor), an operation method thereof, and a design structure thereof are provided to reduce the turn-on time of a SCR(Silicon Controlled Rectifier) by lowering a trigger current and voltage .;CONSTITUTION: An improved SCR(Silicon Controlled Rectifier) has an improved turn-on time. The ESD protecting circuit based on the SCR of the improved turn-on time includes an integrated JFET(Junction Field Effect Transistor)(14) which is serially connected with an NPN(N-well, P-diffusion, N-diffusion) base. JFET prevents SCR miss-triggering. A JFET produces high resistance contact during an ESD(Electrostatic Discharge) event. The high resistance contact helps a trigger current and voltage to be lower in comparison with a normal operation.;COPYRIGHT KIPO 2012