POLYSILICON THIN FILM WITH LOW TEMPERATURE BY INTERLAYER GRAIN GROWTH SILICON, A MANUFACTURING METHOD THEREOF, A TRANSISTOR, AND A DISPLAY DEVICE THEREOF

摘要

PURPOSE: A polysilicon thin film with low temperature by interlayer grain growth silicon, a manufacturing method thereof, a transistor, and a display device thereof are provided to efficiently control an off-state current by arranging a catalyst layer in the intermediate position of an amorphous silicon layer.;CONSTITUTION: A buffer layer(12) is formed on a substrate. A first amorphous silicon thin film is formed in the buffer layer. A catalyst particle(22) is formed in the first amorphous silicon thin film. A second amorphous silicon thin film is formed to cover the first amorphous silicon thin film and the catalyst particle. A polysilicon thin film with low temperature is formed by crystallizing the first amorphous silicon thin film and the second amorphous silicon thin film using the catalyst particle.;COPYRIGHT KIPO 2012