NONVOLATILE MEMORY DEVICE, PAGE BUFFER CIRCUIT THEREFOR, AND REFRESH METHOD THEREOF CAPABLE OF IMPROVING REFRESH EFFICIENCY

摘要

PURPOSE: A nonvolatile memory device, a page buffer circuit therefore, and a refresh method thereof are provided to efficiently maintain the level of refresh data by refreshing data of a page buffer at high speed.;CONSTITUTION: A page buffer circuit includes a main latch circuit(134), a temporary latch circuit(136), and a refresh precharge unit(150). The main latch circuit stores potential of a bit line applied to a sensing node. The temporary latch circuit temporarily stores data of the main latch circuit. The refresh precharge unit applies a precharge voltage to a main latch circuit in a refresh mode. A page buffer circuit transmits data of the main latch circuit to a sensing node in a refresh mode. The main latch circuit and the temporary latch circuit share charges according as the main latch circuit is precharged to a designated potential.;COPYRIGHT KIPO 2012