Method for fabricating fine pattern in photomask

摘要

to form a light shielding film on the substrate , so the light barrier is exposed to the first line width on the light barrier to form a first resist film pattern . Etching the first resist layer parts exposed by the light shielding film pattern at a first depth to form the grooves , and the first resist film by removing the pattern to expose the upper surface of the light shielding film formed grooves . The light shielding film on the exposed bottom surface of the groove forming a second resist layer pattern to be partially exposed , and the second light shielding film of the resist film exposed by the pattern is relatively greater than the first width by etching to a second depth proposes a method for forming a fine pattern of a photomask for forming the light shielding film pattern to be exposed to the substrate is small the second line width .