Method of implanting p-type ion impurities in dual poly-gate and method of fabricating dual poly gate using the same

摘要

The p-type impurity ion implantation method of the dual poly-gate of the present invention includes a first doping step of doping a p-type impurity ion with a first energy to a polysilicon film formed on a substrate via a gate insulating film, and a polysilicon film A second doping step of doping the p-type impurity ion with a variable energy whose energy is changed from the first energy to the second energy, and a third doping step of doping the p-type impurity ion with the second energy with respect to the polysilicon film. Include.;Dual Polygate, Boron Penetration, Polydiffusion Rate (PDR), Plasma Doping