INGOT SINGLE CRYSTAL GROWTH APPARATUS WHICH INCLUDES SUPPLY MELTING FURNACE CAPABLE OF REDUCING COST OF SILICON WAFER BY IMPROVING YIELD

摘要

PURPOSE: An ingot single crystal growth apparatus which includes a supply melting furnace is provided to arrange impurity concentrations of liquid silicon by evenly mixing impurities added in the liquid silicon with the same distribution in all parts, thereby arranging the same conductivity in the upper end part, middle part, and lower end part of a single crystal ingot.;CONSTITUTION: A quartz crucible device(32) is placed inside of a chamber(10). A heat shield device(30) is comprised of a structure in which a graphite crucible device(33) is covered. A chamber connection clamp(13) is included in the upper end part of the chamber. A chamber device(40) comprises a vertical transfer cylinder device(50) through an upper end part(44) in an internal space part(42). A motor device(53) is included in the end part of the vertical transfer cylinder device.;COPYRIGHT KIPO 2012