METHOD FOR FORMATION OF LDD OF THIN FILM TRANSISTOR, A METHOD FOR FABRICATION OF A THIN FILM TRANSISTOR AND AN ORGANIC LIGHT EMITTING DEVICE USING THE SAME, CAPABLE OF REDUCING LEAKAGE CURRENT

摘要

PURPOSE: A method for formation of LDD of thin film transistor, a method for fabrication of a thin film transistor and an organic light emitting device using the same are provided to symmetrically form the LDD of a bottom-gate type thin film transistor by forming a lightly doped drain for LDD.;CONSTITUTION: A gate electrode(21) is formed on the front side of a substrate(11). The gate insulating layer(22) is formed on the gate electrode and substrate. An active layer(23) is formed on the gate insulating layer. The low density ion is inserted into the active layer from the back side of the substrate. The lightly doped drain and heavily doped impurity region are formed within the active layer.;COPYRIGHT KIPO 2012