ORGANIC METAL PRECURSOR COMPLEX FOR DEPOSITION OF METAL FILM INTO A DIFFUSION LAYER BY ATOMIC LAYER DEPOSITION

摘要

PURPOSE: An organic metal precursor complex containing ligand with metal and electron withdrawing groups is provided to ensure proper heat generation and reduction on a diffusion barrier layer and metal layer.;CONSTITUTION: An organic metal copper complex is denoted by chemical formula III. In chemical formula III, R5 and R6 are independently C1-C3 carbon atoms. An electron withdrawing group is -CF_3. The organic metal copper complex causes exothermic chemical reaction on the surface of WN and copper. The organic metal copper complex is chemically stable without dissociation before contact of the complex and a reducing agent.;COPYRIGHT KIPO 2012