首页> 外国专利> SILICON CARBIDE AND A METHOD FOR MANUFACTURING THE SAME CAPABLE OF STANDARDIZING THE DIAMETER OF THE SILICON CARBIDE AND INCREASING THE PURITY OF THE SILICON CARBIDE

SILICON CARBIDE AND A METHOD FOR MANUFACTURING THE SAME CAPABLE OF STANDARDIZING THE DIAMETER OF THE SILICON CARBIDE AND INCREASING THE PURITY OF THE SILICON CARBIDE

机译:碳化硅及其制造方法,其能够标准化碳化硅的直径并提高碳化硅的纯度

摘要

PURPOSE: Silicon carbide and a method for manufacturing the same are provided to mix silicon source and an organic carbon compound without a separate cross-linking process by using a cross-linking agent containing a thermosetting resin. CONSTITUTION: A method for manufacturing silicon carbide includes the following: silicon source, an organic carbon compound, and a cross-linking agent are mixed(ST10); and the mixed material is heated to form silicon carbide(ST20). The cross-linking agent includes a thermosetting resin and includes at least one material selected from a group composed of an azo-based compound and a peroxide-based compound. The organic carbon compound include at least one selected from a phenol resin, a urea resin, a melamine resin, an epoxy resin, and a polyester resin.
机译:目的:提供一种碳化硅及其制造方法,其通过使用包含热固性树脂的交联剂而无需单独的交联过程来混合硅源和有机碳化合物。组成:一种制造碳化硅的方法包括以下步骤:混合硅源,有机碳化合物和交联剂(ST10);然后将混合材料加热以形成碳化硅(ST20)。交联剂包括热固性树脂,并且包括选自由偶氮类化合物和过氧化物类化合物组成的组中的至少一种材料。有机碳化合物包括选自酚醛树脂,脲树脂,三聚氰胺树脂,环氧树脂和聚酯树脂中的至少一种。

著录项

  • 公开/公告号KR20120011177A

    专利类型

  • 公开/公告日2012-02-07

    原文格式PDF

  • 申请/专利权人 LG INNOTEK CO. LTD.;

    申请/专利号KR20100072832

  • 发明设计人 HAN JUNG EUN;KIM YOUNG NAM;KIM BYUNG SOOK;

    申请日2010-07-28

  • 分类号C01B31/36;C04B35/565;C04B35/634;C04B35/64;

  • 国家 KR

  • 入库时间 2022-08-21 17:10:41

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