首页> 外国专利> METHOD FOR MANUFACTURING A UNIFORM CIS OR CIGS THIN FILM AT A LOW TEMPERATURE AND A NON-VACUUM CONDITION

METHOD FOR MANUFACTURING A UNIFORM CIS OR CIGS THIN FILM AT A LOW TEMPERATURE AND A NON-VACUUM CONDITION

机译:在低温和非真空条件下制造均匀CIS或CIGS薄膜的方法

摘要

PURPOSE: A method for manufacturing a uniform CIS or CIGS thin film is provided to obtain a thin film with various shapes and phases by easily controlling the composition of solutions, the density of impurities, reaction time, and temperature.;CONSTITUTION: A first electrode layer(110) is formed on a substrate(100). A seed particle layer(120) including a copper indium compound seed particle is formed on the first electrode layer. Solutions(130) with water soluble precursors are spread on the seed particle layer. The solutions with the water soluble precursors include organic solvents and/or inorganic solvents. The spread solutions are changed into a thin film(140) at a high temperature.;COPYRIGHT KIPO 2012
机译:目的:提供一种制造均匀的CIS或CIGS薄膜的方法,通过容易地控制溶液的组成,杂质的密度,反应时间和温度来获得具有各种形状和相的薄膜。组成:第一电极在衬底(100)上形成层(110)。在第一电极层上形成包括铜铟化合物种子粒子的种子粒子层(120)。具有水溶性前体的溶液(130)散布在种子颗粒层上。具有水溶性前体的溶液包括有机溶剂和/或无机溶剂。铺展的溶液在高温下变成薄膜(140)。;COPYRIGHT KIPO 2012

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