首页> 外国专利> METHOD OF MANUFACTURING DENSE CIGSe/CISe THIN FILM USING SELENIZATION OF CIGS/CIS NANOPARTICLES

METHOD OF MANUFACTURING DENSE CIGSe/CISe THIN FILM USING SELENIZATION OF CIGS/CIS NANOPARTICLES

机译:利用CIGS / CIS纳米粒子的硒化制造稠密CIGSe / CISe薄膜的方法

摘要

Disclosed is a method of manufacturing a dense CISe/CIGSe thin film using selenization of CIS/CIGS nanopart icles, which includes (a) preparing CIGS or CIS compound nanopart icles as a precursor, (b) preparing a slurry of the nanopart icles, (c) applying the slurry on a substrate in a non-vacuum, thus forming a CIGS or CIS precursor thin film, and (e) thermally treating the precursor thin film at high temperature using a vapor including Se to replace S of the thin film with Se, thus forming a CIGSe or CISe compound thin film, whereby the structure of the CISe/CIGSe compound thin film is highly densified via lattice expansion, ultimately increasing the efficiency of a solar cell using such a thin film.
机译:公开了一种使用CIS / CIGS纳米粒子硒化制造致密CISe / CIGSe薄膜的方法,该方法包括(a)制备CIGS或CIS化合物纳米粒子作为前体,(b)制备纳米粒子的浆料,( c)以非真空的方式将浆料施加到基板上,从而形成CIGS或CIS前体薄膜,并且(e)使用包含Se的蒸气在高温下对前体薄膜进行热处理,以用Se,从而形成CIGSe或CISe复合薄膜,从而通过晶格膨胀高度致密化CISe / CIGSe复合薄膜的结构,最终提高了使用这种薄膜的太阳能电池的效率。

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