METHOD FOR FORMING A CAPACITOR AND A SEMICONDUCTOR DEVICE USING THE SAME CAPABLE OF IMPROVING THE NOISE ATTENUATION EFFICIENCY OF A HIGH FREQUENCY POWER VOLTAGE

摘要

PURPOSE: A method for forming a capacitor and a semiconductor device using the same are provided to improve the noise attenuation efficiency of a decoupling capacitor by decreasing the resistance of a wire which connects the decoupling capacitor to a power voltage.;CONSTITUTION: A first MOS capacitor(MOS_CP1) includes a first gate and a first source/drain. A second MOS capacitor(MOS_ CP2) includes a second gate and a second source/drain. A first cylinder capacitor(CYL_CP1) includes a top electrode, a first dielectric layer, and a first bottom electrode. A second cylinder capacitor(CYL_CP2) includes a top electrode, a second dielectric layer, and a second bottom electrode. A metal wire(10A,10B) connects the gate to the bottom electrode.;COPYRIGHT KIPO 2012