HIGH FREQUENCY SEMICONDUCTOR SWITCH FOR HAVING A FET(FIELD EFFECT TRANSISTOR) DESIGNED IN CONSIDERATION OF PROPERTIES OF BEING REQUIRED FROM A TRANSMISSION TERMINAL AND A RECEIVING TERMINAL

摘要

PURPOSE: A high frequency semiconductor switch is provided to have a FET(Field Effect Transistor) with properties to be required for a transmission terminal and a receiving terminal.;CONSTITUTION: A high frequency semiconductor switch includes a plurality of field effects transistors. A source region and a drain region are formed on a substrate while leaving an interval. A gate(160) is formed on the substrate while leaving an interval. A source contact(172) is connected to the source region on the substrate. A drain contact(182) is connected to the drain region on the substrate. The distance between a source contact and a drain contact of a transistor(50a) on a receiving terminal is longer than the distance between a source contact and a drain contact of a transistor(50c) on a transmission terminal.;COPYRIGHT KIPO 2012