PURPOSE: A chemical vapor depositing apparatus for growing a gallium nitride-based LED thin film is provided to improve the quality of a thin film on a substrate by preventing an organic metal compound from being thermally decomposed in a nozzle. CONSTITUTION: A process tube(100) includes an inner tube(102) and an outer tube(104). The inner tube receives a boat(200) for loading a plurality of substrates. A heater assembly(110) surrounds the process tube. A first nozzle unit(300) sprays source gas and reaction gas to the substrate loaded on the boat. A seal cap(220) moves to open and close the opening unit of the process tube by a driving unit(230).
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