METHOD AND CVD FOR THE GROWTH OF GAN-BASED LED

摘要

PURPOSE: A chemical vapor depositing apparatus for growing a gallium nitride based LED thin film and a chemical vapor depositing method are provided to increase a processing amount per unit time by loading susceptors with a plurality of stages on a boat. CONSTITUTION: A process tube(100) comprises an inner tube(102) and an outer tube(104). The inner tube receives a boat(200) for loading a plurality of substrates(S). A heater assembly surrounds the process tube. A gas supply unit(400) includes a gas supply line(402), a raw gas supply source(412), a reaction gas supply source(414), and a purge gas supply source(416). The raw gas supply source is connected to three branch lines.