SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF EQUIPPED WITH A OXYGEN TRAPPING FILM CAPABLE OF IMPROVING A NARROW WIDTH EFFECT OF THE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to control a threshold voltage of a transistor to be increased by forming an oxygen trapping film on the upper side of a gate electrode and an active area.;CONSTITUTION: An element isolation film limiting an active area(5) is formed on a substrate(1). A gate electrode(9) is formed on the active area. A gate insulating layer(7) is formed between the gate electrode and the active area. A spacer(11) is formed on the side of the gate electrode. An oxygen trapping film(15a) is formed on the substrate which includes the gate electrode. An inter-layer insulating film(17) is formed on the oxygen trapping film. A contact etching stop film is formed between the oxygen trapping film and the inter-layer insulating film.;COPYRIGHT KIPO 2012