MANUFACTURING METHOD OF RUTHENIUM CAPPED SILICIDE NANOWIRE CAPABLE OF CONTROLLING THE THICKNESS OF A CAPPING

摘要

PURPOSE: A manufacturing method of ruthenium capped silicide nanowire is provided to use ruthenium as a capping layer by using an atomic layer deposition process.;CONSTITUTION: A manufacturing method of ruthenium capped silicide nanowire comprises the following step: evaporating a cobalt atomic layer thin film on a silicon nano wire substrate using an atomic layer deposition; and evaporating the ruthenium on silicon nano wire in which cobalt is vaporized for capping the ruthenium using the atomic layer deposition process. The ruthenium capping step comprises the following steps: injecting and evaporating DER(2,4-dimethylpentadienyl ethylcyclopentadienyl ruthenium) on the nano wire substrate as a precursor; washing with argon gas; injecting O2 as a reactant into a reactor; and washing with argon gas.;COPYRIGHT KIPO 2012