首页> 外国专利> HEAT CONDUCTION FOR CHIP STACKS AND 3-D CIRCUITS CAPABLE OF PARTIALLY TRANSFERRING HEAT BY A DIAMOND LAYER

HEAT CONDUCTION FOR CHIP STACKS AND 3-D CIRCUITS CAPABLE OF PARTIALLY TRANSFERRING HEAT BY A DIAMOND LAYER

机译:金刚石层可部分传递热量的芯片堆和3D电路的导热

摘要

PURPOSE: Heat conduction for chip stacks and 3-d circuits is provided to reduce manufacturing costs by enhancing thermal conductance of a semiconductor assembly.;CONSTITUTION: A part of a semiconductor layer is removed in order to form an opening extended from a front side of a semiconductor layer(16) to a back side of the semiconductor layer. A diamond layer(22) is formed including a first exposed surface on the front side of the semiconductor layer and a second exposed surface on the back side of the semiconductor layer. The semiconductor layer is etched in order to expose the diamond layer formed on the back side of the semiconductor layer. The diamond layer extended through the opening is extended by using the diamond layer formed on the back side of the semiconductor layer as crystallization nuclei.;COPYRIGHT KIPO 2012
机译:目的:提供用于芯片堆叠和3-d电路的热传导,以通过增强半导体组件的热导率来降低制造成本。;组成:半导体层的一部分被去除,以形成从半导体器件正面延伸的开口半导体层(16)到半导体层的背面。形成金刚石层(22),其包括在半导体层的正面上的第一暴露表面和在半导体层的背面上的第二暴露表面。蚀刻半导体层以便暴露形成在半导体层的背面上的金刚石层。通过将形成在半导体层背面的金刚石层用作晶核,延伸穿过开口的金刚石层。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20120084698A

    专利类型

  • 公开/公告日2012-07-30

    原文格式PDF

  • 申请/专利权人 INTERSIL AMERICAS LLC.;

    申请/专利号KR20120060184

  • 发明设计人 STEPHEN JOSEPH GAUL;FRANCOIS HEBERT;

    申请日2012-06-05

  • 分类号H01L23/36;

  • 国家 KR

  • 入库时间 2022-08-21 17:09:28

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