MANUFACTURING APPARATUS OF A SAPPHIRE SINGLE CRYSTAL BY A KYROPOULOS METHOD USING AN OVAL CRUCIBLE WITH AN IMPROVED RECOVERY RATE THROUGH ANISOTROPIC HEATING

摘要

PURPOSE: A manufacturing apparatus of a sapphire single crystal by a Kyropoulos method using an oval crucible is provided to improve a low recovery rate of the Kyropoulos method by growing a cylindrical ingot to an oval ingot by using the oval crucible.;CONSTITUTION: A chamber(110) accepts an insulating material(120). A heating element(130) is installed inside the insulating material. A crucible(140) is located inside the heating element and receives a raw material for a sapphire single crystal. A support(150) prevents the crucible from sagging to the bottom due to the load of an object received in the crucible. A stand(160) is located on the upper end of the support.;COPYRIGHT KIPO 2012