首页>
外国专利>
THE METHOD OF SILICON NANOWIRE COATED WITH ZINC OXIDE FILM AND SILICON NANOWIRE COATED WITH ZINC OXIDE FILM PREPARED THEREBY
THE METHOD OF SILICON NANOWIRE COATED WITH ZINC OXIDE FILM AND SILICON NANOWIRE COATED WITH ZINC OXIDE FILM PREPARED THEREBY
展开▼
机译:氧化锌膜包覆硅纳米管的方法及由此制备的氧化锌膜包覆硅纳米线的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: A manufacturing method of silicon nanowire in which zinc oxide film is coated and a ZNO layer coated silicon nano wire manufactured by the method are provided to improve light emission properties of the silicon nanowire. CONSTITUTION: A manufacturing method of silicon nanowire in which zinc oxide film is coated comprises the following steps: forming silicon nano wires on a silicon substrate using a non-electrolytic etching process; and coating zinc oxide(ZnO) on the silicon nano wires; and heat treating the ZNO coated silicon nano wires. The non-electrolytic etching process uses silver (Ag) dipped in the nitric acid. The zinc oxide coating is a sol-gel method, heating, a solution method, a chemistry gaseity deposition method, a method for atomic layer deposition and a sputtering method. The thermal process is processed at 400-700 deg. Celsius under a N2/3 mol% H2 reducing atmosphere or an oxygen atmosphere. The thickness of the ZNO layer is 2-10 nano meters.
展开▼