首页> 外国专利> EDGE COMBINER CAPABLE OF OBTAINING IMPROVED PERFORMANCE USING AN IMPROVED STRUCTURE AND A FREQUENCY MULTIPLIER AND A FREQUENCY MULTIPLYING METHOD USING THE EDGE COMBINER

EDGE COMBINER CAPABLE OF OBTAINING IMPROVED PERFORMANCE USING AN IMPROVED STRUCTURE AND A FREQUENCY MULTIPLIER AND A FREQUENCY MULTIPLYING METHOD USING THE EDGE COMBINER

机译:使用改进的结构和频率乘法器可获得改善性能的EDGE合并器以及使用EDGE合并器的频率乘法方法

摘要

PURPOSE: An edge combiner and a frequency multiplier and a frequency multiplying method using the edge combiner are provided to be operated at high speed by controlling a turn-off operation of a PMOS transistor in a differential cascode voltage switch logic through a separate control unit.;CONSTITUTION: A first signal output part(510) includes a first control part and a second control part which respectively control turn-off operations of a first PMOS(P-channel Metal Oxide Semiconductor) transistor and a second PMOS transistor in a differential cascode voltage switch logic. A second signal output part(520) controls a duty ratio of signals by toggling each output signal of the first signal output part. The first control part comprises a first inverter, a first NMOS(N-channel Metal Oxide Semiconductor) passgate, and a first shut off PMOS transistor. Drain terminals of the first shut off PMOS transistor and the first NMOS passgate are connected to the first PMOS transistor. The second controller comprises a second inverter, a second NMOS passgate, and a second shut off PMOS transistor.;COPYRIGHT KIPO 2012
机译:目的:提供一种边缘合并器和倍频器以及使用该边缘合并器的倍频方法,以通过独立的控制单元控制差分共源共栅电压开关逻辑中的PMOS晶体管的关断操作来高速运行。组成:第一信号输出部分(510)包括第一控制部分和第二控制部分,分别控制差分共源共栅中的第一PMOS(P沟道金属氧化物半导体)晶体管和第二PMOS晶体管的关断操作电压开关逻辑。第二信号输出部分(520)通过切换第一信号输出部分的每个输出信号来控制信号的占空比。第一控制部分包括第一反相器,第一NMOS(N沟道金属氧化物半导体)通行门和第一截止PMOS晶体管。第一截止PMOS晶体管和第一NMOS通栅的漏极端子连接到第一PMOS晶体管。第二控制器包括第二反相器,第二NMOS通道门和第二截止PMOS晶体管。; COPYRIGHT KIPO 2012

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