首页> 外国专利> SPUTTERING APPARATUS CAPABLE OF PREVENTING DAMAGE OF A SUBSTRATE IN A SPUTTERING PROCESS

SPUTTERING APPARATUS CAPABLE OF PREVENTING DAMAGE OF A SUBSTRATE IN A SPUTTERING PROCESS

机译:能够防止衬底在溅射过程中损坏的溅射装置

摘要

PURPOSE: A sputtering apparatus is provided to prevent ultraviolet rays generating in plasma discharge around a target from being irradiated to a substrate because an ultraviolet ray shield is formed between the target and a susceptor placed on the substrate at a predetermined height.;CONSTITUTION: A sputtering apparatus comprises a chamber(100), a susceptor(200), a target(400), an ionizer(600), a neutralization and energy controller(700), and an ultraviolet ray shield(800). The susceptor supports a substrate in the chamber. The target is located in the side surface of the susceptor and is composed of deposition substances depositing on the substrate. The ionizer ionizes neutral particles consisting of target substances. The neutralization and energy controller controls energy while neutralizing the particles passing through the ionizer. The ultraviolet ray shield prevents ultraviolet rays generating in plasma discharge from being irradiated on the substrate.;COPYRIGHT KIPO 2012
机译:目的:提供一种溅射设备,以防止靶周围等离子体放电中产生的紫外线照射到基板上,因为在靶和放置在基板上预定高度的基座之间形成了紫外线屏蔽层。溅射装置包括腔室(100),基座(200),靶(400),电离器(600),中和能量控制器(700)和紫外线屏蔽罩(800)。基座在腔室中支撑基板。靶位于基座的侧面,并且由沉积在基板上的沉积物质组成。电离器电离由目标物质组成的中性粒子。中和和能量控制器控制能量,同时中和通过电离器的粒子。紫外线防护罩可防止等离子放电中产生的紫外线照射到基板上。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20120091643A

    专利类型

  • 公开/公告日2012-08-20

    原文格式PDF

  • 申请/专利权人 JUSUNG ENGINEERING CO. LTD.;

    申请/专利号KR20110011533

  • 发明设计人 HAM MOOYOUNG;

    申请日2011-02-09

  • 分类号C23C14/34;C23C14/50;C23C14/56;

  • 国家 KR

  • 入库时间 2022-08-21 17:09:21

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