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SEMICONDUCTOR DEVICE AND A TESTING METHOD THEREOF CAPABLE OF INCREASING A LIFETIME OF THE SEMICONDUCTOR DEVICE

机译:可延长半导体装置寿命的半导体装置及其测试方法

摘要

PURPOSE: A semiconductor device and a testing method thereof are provided to suppress heat in a stress part by controlling a gate signal of a switching device based on the stress of a semiconductor chip.;CONSTITUTION: A semiconductor device includes a semiconductor chip(1) and a stress detecting device(7). The semiconductor chip includes a gate electrode(5). A control signal applied to the gate electrode is controlled based on stress detected by the stress detecting device. A first stress detecting device detects stress applied to the center of the semiconductor chip. A second stress detecting device detects stress applied to an external side of the semiconductor chip.;COPYRIGHT KIPO 2012
机译:目的:提供一种半导体器件及其测试方法,以通过基于半导体芯片的应力控制开关器件的栅极信号来抑制应力部分中的热量。组成:一种半导体器件,包括半导体芯片(1)应力检测装置(7)。半导体芯片包括栅电极(5)。基于由应力检测装置检测到的应力来控制施加到栅电极的控制信号。第一应力检测装置检测施加到半导体芯片的中心的应力。第二应力检测装置检测施加到半导体芯片外侧的应力。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20120094421A

    专利类型

  • 公开/公告日2012-08-24

    原文格式PDF

  • 申请/专利权人 MITSUBISHI ELECTRIC CORPORATION;

    申请/专利号KR20120010589

  • 发明设计人 NARAZAKI ATSUSHI;

    申请日2012-02-02

  • 分类号H01L21/66;

  • 国家 KR

  • 入库时间 2022-08-21 17:09:17

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